Broadband InGaP/GaAs HBT Doherty Power Amplifier IC Using Direct Interstage Power Division for Compact 5G NR Handset Module

نویسندگان

چکیده

This paper presents a 2.8-3.8 GHz broadband 2-stage fully differential Doherty power amplifier using direct interstage division based on 2-μmInGaP/GaAs HBT process for 5G new radio handset applications. A compact transformer-less network is proposed carrier and peaking amplifiers. The ratio at the designed to dynamically vary according input level provide higher gain desired load impedance modulation. By utilizing non-linear reactance of amplifier, dynamic circuits were an operating frequency band as broad 1 GHz. In addition, active bias optimized have sufficient expansion, so that overall AM-AM characteristics flat possible. modulation one transformer two quarter-wave transmission lines proposed. For off-chip output transformer, trajectory wide matching presented T-equivalent circuit transformer. self-inductance maximize bandwidth. Using uplink signal with bandwidth 100 MHz, implemented PA IC exhibited 31.9 38.4 dB, PAE 22.0 30.6%, average 26.0 27.8 dBm given ACLR -33.0 dBc without pre-distortion.

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ژورنال

عنوان ژورنال: IEEE Access

سال: 2023

ISSN: ['2169-3536']

DOI: https://doi.org/10.1109/access.2023.3256079